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AM26LS31, AM26LS31C, AM26LS31I, AM26LS31M

SLLS114K – JANUARY 1979 – REVISED JULY 2016

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Copyright © 1979–2016, Texas Instruments Incorporated

(1)

Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings

only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating

Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2)

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)

(1)

MIN

MAX

UNIT

7

V

Input voltage

7

V

Output off-state voltage

5.5

V

Lead temperature 1,6 mm (1/16 in) from case for 10 s

260

°C

Lead temperature 1,6 mm (1/16 in) from case for 60 s J package

300

°C

Storage temperature

–65

150

°C

(1)

JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2)

JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.2 ESD Ratings

VALUE

UNIT

Electrostatic

discharge

±2000

V

±1000

6.3 Recommended Operating Conditions

MIN

NOM

MAX

UNIT

Supply voltage

AM26LS31C

4.75

5

5.25

V

AM26LS31M

4.5

5

5.5

High-level input voltage

2

V

Low-level input voltage

0.8

V

High-level output current

–20

mA

Low-level output current

20

mA

Operating free-air temperature

AM26LS31C

0

70

°C

AM26LS31I

–40

85

AM26LS31M

–55

125

(1)

For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report.

(2)

The package thermal impedance is calculated in accordance with JESD 51-7.

6.4 Thermal Information

AM26LS31x

UNIT

D (SOIC)

DB (SSOP)

N (PDIP)

NS (SO)

16 PINS

16 PINS

16 PINS

16 PINS

73

82

67

64

°C/W

Junction-to-case (top) thermal resistance

38.1

–

–

32.6

°C/W

Junction-to-board thermal resistance

34.7

–

–

36.8

°C/W

Junction-to-top characterization parameter

7.1

–

–

4.2

°C/W

Junction-to-board characterization parameter

34.4

–

–

36.5

°C/W