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EU01Z Scheda tecnica(PDF) 1 Page - Diode Semiconductor Korea |
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EU01Z Scheda tecnica(HTML) 1 Page - Diode Semiconductor Korea |
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1 / 2 page ![]() FEATURES Low cos t Diffused junction MECHANICAL DATA Cas e: JEDEC DO-41, molded plastic Method 208 Mounting: Any Ratings at 25 ambient tem perature unless otherwis e s pecified. Single phas e,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%. Maximum peak repetitive reverse voltage VRRM V Maximum RMS voltage VRMS V Maximum DC blocking voltage VDC V Maximum average f orw ard rectified current 9.5mm lead length @T A=75 Peak forw ard surge current 10ms single half-sine-w ave superimplsed on rated load @T J=125 Maximum instantaneous forw ard voltage @ 0.25A VF V Maximum reverse current @T A=25 at Rated DC blocking voltage @T A=100 Maximum reverse recovery time (Note1) trr ns Typical junction capacitance (Note2) CJ pF Typical thermal resistance (Note3) RθJL /W Operating junction temperature range TJ Storage temperature range TSTG 2. Measured at 1.0MHZ and applied rev erse of 4.0V DC. 15.0 2.5 3. Themal resistance f rom junction to ambient. - 55 ----- + 150 10.0 150.0 100 - 55 ----- + 150 20 15 EU01Z(Z)---EU01A(Z) 280 400 600 420 UNITS EU01Z EU01A EU01 High current capability Polarity: Color band denotes cathode Weight: 0.012 ounces, 0.34 grams 200 sim ilar solvents Eas ily cleaned with freon, Alcohol, lsopropand and Term inals: Axial leads,solderable per MIL-STD-202, Note: 1. Measured with I F=0.5A, IR=1A, I rr=0.25A. 140 IFSM IF(AV) 20 400 A A A 0.25 200 IR 600 HIGH EFFICIENCY RECTIFIERS VOLTAGE RANGE: 200--- 600 V CURRENT: 0.25A MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS DO - 41 Low leakage Low forward voltage drop Dimensions in millimeters www.diode.kr Diode Semiconductor Korea |
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