DB92416m-AAS/A2

PARAMETER

MIN TYP MAX UNITS

TEST CONDITION

Input

Forward Voltage (V

1.2

1.4

V

I

Reverse Voltage (V

5

V

I

Reverse Current (I

10

µA

V

Output

Collector-emitter Breakdown (BV

35

V

I

( Note 2 )

Emitter-collector Breakdown (BV

6

V

I

Collector-emitter Dark Current (I

100

nA

V

Coupled

TIL197, TIL198, TIL199

500

7500

2mA I

TIL197A, TIL198A, TIL199A

1000

7500

2mA I

TIL197B, TIL198B, TIL199B

1500

7500

2mA I

Collector-emitter Saturation VoltageV

CE (SAT)

0.8

1.0

V

2mA I

Input to Output Isolation Voltage V

ISO

5300

V

RMS

See note 1

7500

V

PK

See note 1

Input-output Isolation Resistance R

ISO

Ω

V

Output Rise Time

tr

100

µs

V

Output Fall Time

tf

100

µs

I

7/12/00

ELECTRICAL CHARACTERISTICS ( T

Note 1

Measured with input leads shorted together and output leads shorted together.

Note 2

Special Selections are available on request. Please consult the factory.

ABSOLUTE MAXIMUM RATINGS

(25°C unless otherwise specified)

Storage Temperature

-55°C to + 125°C

Operating Temperature

-55°C to + 100°C

Lead Soldering Temperature

(1/16 inch (1.6mm) from case for 10 secs) 260°C

INPUT DIODE

Forward Current

50mA

Reverse Voltage

6V

Power Dissipation

70mW

OUTPUT TRANSISTOR

Collector-emitter Voltage BV

CEO

35V

Emitter-collector Voltage BV

ECO

6V

Power Dissipation

150mW

POWER DISSIPATION

Total Power Dissipation

200mW

(derate linearly 2.67mW/°C above 25°C)