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2N5929 Scheda tecnica(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2N5929 Scheda tecnica(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc website:www.iscsemi.com isc & iscsemi is registered trademark 1 isc Silicon NPN Power Transistors 2N5929 DESCRIPTION · DC Current Gain- : hFE= 20-100@IC= 10A · Low Collector Saturation Voltage- : VCE(sat)= 1.0V(Max)@ IC= 15A APPLICATIONS · Designed for general purpose power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 0.875 ℃ /W SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 90 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 30 A IB Base Current-Continuous 7.5 A PC Collector Power Dissipation @TC=25℃ 175 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -65~150 ℃ |
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