2N6050 datasheet(2/2 Pages) ISC

Il numero della parte	2N6050

Spiegazioni elettronici	isc Silicon PNP Darlingtion Power Transistor

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Produttore elettronici	ISC [Inchange Semiconductor Company Limited]

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INCHANGE Semiconductor

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isc Silicon PNP Darlingtion Power Transistor

2N6050

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

MAX

UNIT

VCEO(SUS)

Collector-Emitter Sustaining Voltage

IC= -50mA ; IB= 0

-60

VCE(sat)-1

Collector-Emitter Saturation Voltage

IC= -6A; IB= -24mA

-2.0

VCE(sat)-2

Collector-Emitter Saturation Voltage

IC= -12A; IB= -120mA

-3.0

VBE(sat)

Base-Emitter Saturation Voltage

IC= -12A; IB= -120mA

4.0

VBE(on)

Base-Emitter On voltage

IC= -6A ; VCE= -3V

-2.8

ICEO

Collector Cutoff current

VCE= -30V; IB=0

-1.0

ICEX

Collector Cutoff current

VCE= -60V;VBE(off)= -1.5V

VCE= -60V;VBE(off)= -1.5V,TC=150℃

-0.5

-5.0

IEBO

Emitter Cut-off current

VEB= -5V; IC= 0

-2.0

hFE-1

DC Current Gain

IC= -6A ; VCE= -3V

750

18000

hFE-2

DC Current Gain

IC= -12A ; VCE= -3V

100

COB

Output Capacitance

IE=0 ; VCB= -10V; ftest= 0.1MHz

500

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