2SB1155-3PFA datasheet(2/2 Pages) ISC

Il numero della parte	2SB1155-3PFA

Spiegazioni elettronici	isc Silicon PNP Power Transistor

PDF	2 Pages

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Produttore elettronici	ISC [Inchange Semiconductor Company Limited]

Homepage	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Product Specification

isc website：www.iscsemi.com

isc & iscsemi is registered trademark

isc Silicon PNP Power Transistor

2SB1155

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

V(BR)CEO

Collector-Emitter Breakdown Voltage

IC= -10mA; IB= 0

-80

VCE(sat)-1

Collector-Emitter Saturation Voltage

IC= -7A; IB= -0.35A

-0.5

VCE(sat)-2

Collector-Emitter Saturation Voltage

IC= -15A; IB= -1.5A

-1.5

VBE(sat)-1

Base -Emitter Saturation Voltage

IC= -7A; IB= -0.35A

-1.5

VBE(sat)-2

Base -Emitter Saturation Voltage

IC= -15A; IB= -1.5A

-2.5

ICBO

Collector Cutoff Current

VCB= -100V; IE= 0

-10

IEBO

Emitter Cutoff Current

VEB= -5V; IC= 0

-50

hFE-1

DC Current Gain

IC= -0.1A; VCE= -2V

hFE-2

DC Current Gain

IC= -3A; VCE= -2V

260

hFE-3

DC Current Gain

IC= -8A; VCE= -2V

Current-Gain—Bandwidth Product

IC= -0.5A; VCE= -10V

MHz

Switching Times

ton

Turn-on Time

IC= -7A, IB1= -IB2= -0.7A;

VCC= -50V

0.5

tstg

Storage Time

1.3

Fall Time

0.2



hFE-2Classifications

90-180

130-260

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