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BC847BS Scheda tecnica(PDF) 1 Page - GUANGDONG HOTTECH INDUSTRIAL CO.,LTD. |
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BC847BS Scheda tecnica(HTML) 1 Page - GUANGDONG HOTTECH INDUSTRIAL CO.,LTD. |
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1 / 2 page ![]() Page:P2-P1 Plastic-Encapsulate Transistors GUANGDONG HOTTECH INDUSTRIAL CO,. LTD. (NPN) E 2 B 2 C 1 C 2 B 1 E 1 SOT-363 Features · Ideally Suited for Automatic Insertion · For Switching and AF Amplifier Applications · Ultra-Small Surface Mount Package · Case: SOT-363, Molded Plastic · Case material - UL Flammability Rating Classification 94V - 0 · Moisture sensitivity: Level 1 per J-STD-020A · Terminals: Solderable per MIL-STD-202, Method 208 · Terminal Connections: See Diagram · Marking: K1F (See Page 2) · Weight: 0.006 grams · Ordering & Date Code Information: See Page 2 Mechanical Data Maximum Ratings @ TA = 25°C unless otherwise specified Characteristic Symbol Value Unit Collector-Base Voltage VCBO 50 V Collector-Emitter Voltage VCEO 45 V Emitter-Base Voltage VEBO 5.0 V Collector Current IC 100 mA Peak Collector Current ICM 200 mA Peak Base Current IBM 200 mA Power Dissipation (Note 1) Pd 200 mW Thermal Resistance, Junction to Ambient (Note 1) RqJA 500 °C/W Operating and Storage Temperature Range Tj,TSTG -55 to +125 °C Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on ourwebsite at http://www.diodes.com/datasheets/ap02001.pdf. Electrical Characteristics @ TA = 25°C unless otherwise specified Characteristic Symbol Min Typ Max Unit Test Condition DC Current Gain (Note 2) hFE 200 — 450 — VCE = 5.0V, IC = 2.0mA Collector-Emitter Saturation Voltage (Note 2) VCE(SAT) — — — 100 400 mV IC = 10mA, IB = 0.5mA IC = 100mA, IB = 5.0mA Base-Emitter Saturation Voltage (Note 2) VBE(SAT) — 755 — mV IC = 10mA, IB = 0.5mA Base-Emitter Voltage (Note 2) VBE 580 665 700 mV VCE = 5.0V, IC = 2.0mA Collector Cutoff Current (Note 2) ICBO ICBO — — — 15 5.0 nA µA VCB = 30V, IE = 0 VCB = 30V, Tj = 125°C Emitter Cutoff Current (Note 2) IEBO — — 100 nA VEB = 5.0V, IC = 0 Gain Bandwidth Product fT 100 — — MHz VCE = 5.0V, IC = 10mA, f = 100MHz Collector-Base Capacitance CCBO —— 1.5 pF VCB = 10V, f = 1.0MHz Emitter-Base Capacitance CEBO —11 — pF VEB = 0.5V, f = 1.0MHz BC847BS |
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