MMST4401 datasheet(1/2 Pages) HOTTECH

Il numero della parte	MMST4401

Spiegazioni elettronici	Plastic-Encapsulate Transistors

PDF	2 Pages

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Produttore elettronici	HOTTECH [GUANGDONG HOTTECH INDUSTRIAL CO.,LTD.]

Homepage	http://www.hottech.net.cn/

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1 / 2 page

Page:P2-P1

Plastic-Encapsulate Transistors

GUANGDONG

HOTTECH

INDUSTRIAL

CO,. LTD.

FEATURES

Epitaxial planar die construction.

Complementary PNP type available(MMST4403).

Ultar-small surface mount package.

Marking:K3X

MAXIMUM RATINGS (TA=25

unless otherwise noted)

Parameter

Symbol

Value

Unit

Collector-Base Voltage

V

CBO

60

V

Collector-Emitter Voltage

V

CEO

40

V

Emitter-Base Voltage

V

EBO

6

V

Collector Current -Continuous

I

C

600

mA

Collector Power Dissipation

PC

200

mW

Storage Temperature

Tstg

-55 to +150

ELECTRICAL CHARACTERISTICS (Tamb=25

unless otherwise specified)

Parameter

Symbol

Test conditions

Min

Max

Unit

Collector-base

breakdown

voltage

VCBO

IC=100μA,IE=0

60

V

Collector-emitter

breakdown

voltage

VCEO

IC=1mA,IB=0

40

V

Emitter-base

breakdown

voltage

VEBO

IE=100μA,IC=0

6

V

Collector

cut-off

current

ICEX

VCE=35V,VEB(OFF)=0.4V

0.1

μA

Base cut-off current

IBL

VCE=35V,

VEB(OFF)=0.4V

0.1

μA

DC current

gain

hFE

VCE=1V,IC=0.1mA

VCE=1V,IC=1.0mA

VCE=1V,IC=10mA

VCE=1V,IC=150mA

VCE=2V,IC=500mA

20

40

80

100

40

300

Collector-emitter

saturation

voltage

VCE(sat)

IC=150mA,IB=15mA

IC=500mA,IB=50mA

0.4

0.75

V

Base-emitter

saturation

voltage

VBE(sat)

IC=150mA,IB=15mA

IC=500mA,IB=50mA

0.95

1.2

V

Transition

frequency

fT

VCE=10V,

IE=20mA

f=100MHz

250

MHz

Collector

output

capacitance

Cob

VCB=5V,

IE=0,f=1MHz

6.5

pF

Delay time

td

VCC=30V,VBE=2V,

IC=150mA,IB=15mA

15

nS

Rise time

tr

20

nS

Storage

time

ts

VCC=30V,IC=150mA,

IB1=IB2=15mA

225

nS

Fall time

tf

30

nS

MMST4401 (NPN)

1. BASE

2. EMITTER

SOT-323

3. COLLECTO

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