AL5802LP4

Document number: DS37441 Rev. 4 - 2

4 of 10

www.diodes.com

February 2016

© Diodes Incorporated

AL5802LP4

Electrical Characteristics: NPN Transistor

Symbol

Characteristic

Test Condition

Min

Typ

Max

Unit

Collector-Emitter Breakdown Voltage (Note 6) (Note 7)

40

—

—

V

Emitter-Base Breakdown Voltage

6.0

—

—

V

Collector Cutoff Current (Note 7)

—

—

50

nA

Base Cutoff Current (Note 7)

—

—

50

nA

DC Current Gain

70

100

—

—

—

300

—

Collector-Emitter Saturation Voltage (Note 6)

—

—

0.20

V

Base-Emitter Saturation Voltage

0.65

—

0.85

V

Base-Emitter Turn-On Voltage

0.30

1.10

V

Electrical Characteristics: NPN Pre-biased Transistor

Symbol

Characteristic

Test Condition

Min

Typ

Max

Unit

Collector-Base Breakdown Voltage

30

—

—

V

Collector-Emitter Breakdown Voltage (Note 6)

30

—

—

V

Emitter-Base Breakdown Voltage (Note 7)

5.0

—

—

V

Collector Cutoff Current

—

—

0.5

µA

Emitter Cutoff Current (Note 7)

—

—

0.5

µA

Collector-Emitter Saturation Voltage (Note 6)

—

—

0.3

V

Base-Emitter Turn-On Voltage

0.30

1.10

V

DC Current Gain (Note 6)

100

—

—

—

Input Resistance

—

7

10

13

kΩ

*Characteristics of transistor only.

Notes:

6. Short duration pulse test used to minimize self-heating effect.

7. Guaranteed by design and tested only at the wafer level for single die. These parameters cannot be tested at the finished good level due to test

conditions changed after packaging multi-dies to form an application circuit.