GS2AF - GS2MF

CURRENT: 2.0 A

VOLTAGE RANGE: 50 - 1000V

Characteristic

2.0

60.0

1.1

Operating junction and storage temperature range

Maximum repetitive peak reverse voltage

Maximum RMS voltage

Maximum DC blocking voltage

Maximum average forward rectified current

Peak forward surge current

8.3ms single half sine-wave superimposed on

rated load (JEDEC Method)

Maximum instantaneous forward voltage at 2.0A

Maximum DC reverse current

at rated DC blocking voltage

Typical junction capacitance (NOTE 1)

Note:1.Measured at 1MHz and applied reverse voltage of 4.0V D.C.

2.P.C.B. mounted with 0.2x0.2”(5.0x5.0mm) copper pad areas

5.0

50.0

50.0

30.0

-65 to +175

pF

C

A

µ

Typical thermal resistance (NOTE 2)

C/W

For surface mounted applications

Low reverse leakage

Built-in strain relief,ideal for automated placement

High forward surge current capability

High temperature soldering guaranteed:

250 C/10 seconds at terminals

50

35

50

100

70

100

200

140

200

400

280

400

600

420

600

800

560

800

1000

700

1000

Features

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°C unless otherwise specified

Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.

V

V

V

V

A

A

Unit

Symbol

1 of 2

Case:SMBF , Molded Plastic

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Terminals: Solder Plated, Solderable

per MIL-STD-750, Method 2026

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Polarity: Cathode Band or Cathode Notch

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Marking: Type Number

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Weight: 0.0018 ounces,0.05grams

Mechanical Data

0.73 0.77 0.75

0.021 0.20

1.96 2.00 1.98

1.38 1.35

1.32

3.60

3.63

3.57

4.30

4.33

4.27

5.50

5.55

5.45

SMBF

A

E

L

B

C

E

H

D

E

D

A

Dim

Min

Max

Typ

B

C

H

L

All Dimensions in mm

0.019

SURFACE MOUNT SILICON RECTIFIER DIODES

GS2AF GS2BF GS2DF GS2GF GS2JF GS2KF GS2MF