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TC58FVT321 Scheda tecnica(PDF) 19 Page - Toshiba Semiconductor |
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TC58FVT321 Scheda tecnica(HTML) 19 Page - Toshiba Semiconductor |
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19 / 48 page ![]() TC58FVT321/B321FT/XB-70,-10 2002-08-06 19/48 ABSOLUTE MAXIMUM RATINGS SYMBOL PARAMETER RANGE UNIT VDD VDD Supply Voltage −0.6~4.6 V VIN Input Voltage −0.6~VDD + 0.5 (≤ 4.6) V VDQ Input/Output Voltage −0.6~VDD + 0.5 (≤ 4.6) V VIDH Maximum Input Voltage for A9, OE and RESET 13.0 V VACCH Maximum Input Voltage for /ACC WP 10.5 V PD Power Dissipation 126 mW TSOLDER Soldering Temperature (10 s) 260 °C TSTG Storage Temperature −55~150 °C TOPR Operating Temperature −40~85 °C IOSHORT Output Short-Circuit Current (1) 100 mA (1) Outputs should be shorted for no more than one second. No more than one output should be shorted at a time. CAPACITANCE (Ta ==== 25°C, f ==== 1 MHz) TSOPI SYMBOL PARAMETER CONDITION MAX UNIT CIN Input Pin Capacitance VIN = 0 V 4 pF COUT Output Pin Capacitance VOUT = 0 V 8 pF CIN2 Control Pin Capacitance VIN = 0 V 7 pF This parameter is periodically sampled and is not tested for every device. TFBGA SYMBOL PARAMETER CONDITION MAX UNIT CIN Input Pin Capacitance VIN = 0 V 4 pF COUT Output Pin Capacitance VOUT = 0 V 8 pF CIN2 Control Pin Capacitance VIN = 0 V 7 pF This parameter is periodically sampled and is not tested for every device. RECOMMENDED DC OPERATING CONDITIONS SYMBOL PARAMETER MIN MAX UNIT VDD VDD Supply Voltage 2.7 3.6 VIH Input High-Level Voltage 0.7 × VDD VDD + 0.3 (2) VIL Input Low-Level Voltage −0.3 (1) 0.2 × VDD VID High-Level Voltage for A9, OE and RESET (3) 11.4 12.6 VACC High-Level Voltage for /ACC WP (3) 8.5 9.5 V Ta Operating Temperature −40 85 °C (1) −2 V (pulse width of 20 ns max) (2) +2 V (pulse width of 20 ns max) (3) Do not apply VID/VACC when the supply voltage is not within the device’s recommended operating voltage range. |
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