IPS021 datasheet(1/11 Pages) IRF

Il numero della parte	IPS021

Spiegazioni elettronici	FULLY PROTECTED POWER MOSFET SWITCH

PDF	11 Pages

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Produttore elettronici	IRF [International Rectifier]

Homepage	http://www.irf.com

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1 / 11 page

Features

• Over temperature shutdown

• Over current shutdown

• Active clamp

• Low current & logic level input

• E.S.D protection

IPS021(S)

FULLY PROTECTED POWER MOSFET SWITCH

Data Sheet No.PD 60148-K

Description

The IPS021/IPS021S are fully protected three terminal

SMART POWER MOSFETs that feature over-current,

over-temperature, ESD protection and drain to source

active clamp.These devices combine a HEXFET®

POWER MOSFET and a gate driver. They offer full

protection and high reliability required in harsh envi-

ronments. The driver allows short switching times

and provides efficient protection by turning OFF the

power MOSFET when the temperature exceeds 165

oC

or when the drain current reaches 5A. These devices

restart once the input is cycled. The avalanche capa-

bility is significantly enhanced by the active clamp

and covers most inductive load demagnetizations.

Packages

Product Summary

Rds(on)

150m

Ω (max)

V clamp

50V

Ishutdown

5A

Ton/Toff

1.5

µs

3-Lead D2Pak

IPS021S

3-Lead TO-220

IPS021

www.irf.com

1

Typical Connection

S

Q

Load

D

S

control

IN

R in series

(if needed)

Logic signal

(Refer to lead assignment for correct pin configuration)

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International Rectifier	IPS021L	110Kb / 11P	FULLY PROTECTED POWER MOSFET SWITCH
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