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MBRF2040C Scheda tecnica(PDF) 1 Page - Mospec Semiconductor

Il numero della parte MBRF2040C
Spiegazioni elettronici  Full Plastic Dual Schottky Barrier Power Rectifiers
PDF  2 Pages
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Produttore elettronici  MOSPEC [Mospec Semiconductor]
Homepage  http://www.mospec.com.tw
Logo MOSPEC - Mospec Semiconductor

MBRF2040C Scheda tecnica(HTML) 1 Page - Mospec Semiconductor

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MOSPEC
MBRF2030C Thru MBRF2060C
Switchmode
Full Plastic Dual Schottky Barrier Power Rectifiers
Using the Schottky Barrier principle with a Molybdenum barrier metal.
These state-of-the-art geometry features epitaxial construction with oxide
passivation and metal overlay contact. Ideally suited for low voltage, high
frequency rectification, or as free wheeling and polarity protection diodes.
Features
*
Low Forward Voltage.
*
Low Switching noise.
*
High Current Capacity
*
Guarantee Reverse Avalanche.
*
Guard-Ring for Stress Protection.
*
Low Power Loss & High efficiency.
*
175℃ Operating Junction Temperature
*
Low Stored Charge Majority Carrier Conduction.
*
Plastic Material used Carries Underwriters Laboratory
Flammability Classification 94V-O
SCHOTTKY BARRIER
RECTIFIERS
20 AMPERES
MAXIMUM RATINGS
MBRF20
Characteristic
Symbol
30C
35C
40C
45C
50C
60C
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
30
35
40
45
50
60
V
RMS Reverse Voltage
VR(RMS)
21
25
28
32
35
42
V
Average Rectifier Forward Current (per diode)
Total Device (Rated VR), TC=100℃
IF(AV)
10
20
A
Peak Repetitive Forward Current
(Rate VR, Square Wave, 20kHz)
IFM
20
A
Non-Repetitive Peak Surge Current
(Surge applied at rate load conditions
halfware, single phase, 60Hz)
IFSM
150
A
Operating and Storage Junction
Temperature Range
TJ , Tstg
-65 to +175
℃
30-60 VOLTS
ITO-220AB
MILLIMETERS
DIM
MIN
MAX
A
14.90
15.15
B
13.35
13.55
C
10.00
10.10
D
6.55
6.65
E
2.65
2.75
F
1.55
1.65
G
1.15
1.25
H
0.55
0.65
I
2.50
2.60
J
3.00
3.20
K
1.10
1.20
L
0.55
0.65
M
4.40
4.60
N
1.15
1.25
O
3.35
3.45
P
2.65
2.75
Q
3.15
3.25
R
3.60
3.80
THERMAL RESISTANCES
Typical Thermal Resistance junction to
case (per diode)
Rθ j-c
3.2
℃
/w
ELECTRIAL CHARACTERISTICS
MBRF20
Characteristic
Symbol
30C
35C
40C
45C
50C
60C
Unit
Maximum Instantaneous Forward Voltage
( IF =10 Amp TC = 25℃) (per diode)
( IF =10 Amp TC = 125℃)
VF
0.75
0.66
0.80
0.72
V
Maximum Instantaneous Reverse Current
( Rated DC Voltage, TC = 25℃)
( Rated DC Voltage, TC = 125℃)
IR
0.01
20
mA


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