MAC12HCD datasheet(2/8 Pages) ONSEMI

2 / 8 page

MAC12HCD, MAC12HCM, MAC12HCN

http://onsemi.com

THERMAL CHARACTERISTICS

Characteristic

Symbol

Value

Unit

Thermal Resistance

— Junction to Case

— Junction to Ambient

RθJC

RθJA

2.2

62.5

°C/W

Maximum Lead Temperature for Soldering Purposes 1/8

″ from Case for 10 Seconds

260

°C

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted; Electricals apply in both directions)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Peak Repetitive Blocking Current

(VD = Rated VDRM, VRRM, Gate Open)

TJ = 25°C

TJ = 125°C

IDRM,

IRRM

—

0.01

2.0

ON CHARACTERISTICS

Peak On-State Voltage(1)

(ITM = ±17 A)

VTM

—

1.85

Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 100 Ω)

MT2(+), G(+)

MT2(+), G(–)

MT2(–), G(–)

IGT

—

Holding Current

(VD = 12 V, Gate Open, Initiating Current = ±150 mA)

—

Latch Current (VD = 12 V, IG = 50 mA)

MT2(+), G(+)

MT2(+), G(–)

MT2(–), G(–)

—

Gate Trigger Voltage (Continuous dc) (VD = 12 V, RL = 100 Ω)

MT2(+), G(+)

MT2(+), G(–)

MT2(–), G(–)

VGT

0.5

—

1.5

DYNAMIC CHARACTERISTICS

Rate of Change of Commutating Current

(VD = 400 V, ITM = 4.4 A, Commutating dv/dt = 18 V/µs, Gate Open, TJ

= 125

°C, f = 250 Hz, CL = 10 µF, LL = 40 mH, with Snubber)

(di/dt)c

—

A/ms

Critical Rate of Rise of Off-State Voltage

(VD = Rated VDRM, Exponential Waveform,

Gate Open, TJ = 125°C)

dv/dt

600

—

µs

Repetitive Critical Rate of Rise of On-State Current

IPK = 50 A; PW = 40

µsec; diG/dt = 200 mA/µsec; f = 60 Hz

di/dt

—

µs

(1) Pulse Test: Pulse Width

≤ 2.0 ms, Duty Cycle ≤ 2%.

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