2SC2314 datasheet(1/2 Pages) ISC

Il numero della parte	2SC2314

Spiegazioni elettronici	isc Silicon NPN Power Transistor

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Produttore elettronici	ISC [Inchange Semiconductor Company Limited]

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INCHANGE Semiconductor

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isc Silicon NPN Power Transistor

2SC2314

DESCRIPTION

·

Collector-Emitter Voltage-

:VCER= 75V(Min) ;RBE=150Ω

·

Collector Current-

:IC=1.0A

·

Low Saturation Voltage

: VCE(sat)

=0.6V(MAX)@ I

C

=0.5A

·

Minimum Lot-to-Lot variations for robust device

performance and reliable operation

APPLICATIONS

·

Power Amplifier Applications

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

75

V

VCER

Collector-Emitter Voltage

RBE=150Ω

75

V

VCEO

Collector-Emitter Voltage

45

V

VEBO

Emitter-Base Voltage

6

V

IC

Collector Current-Continuous

1.0

A

ICM

Collector Current-Peak

1.5

A

PC

Collector Power Dissipation

@ Tc=25℃

5

W

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature Range

-55~150

℃

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