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2SD1640 Scheda tecnica(PDF) 1 Page - Inchange Semiconductor Company Limited

Il numero della parte 2SD1640
Spiegazioni elettronici  isc Silicon NPN Darlington Power Transistor
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Produttore elettronici  ISC [Inchange Semiconductor Company Limited]
Homepage  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

2SD1640 Scheda tecnica(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc website：www.iscsemi.com
isc & iscsemi is registered trademark
1
isc Silicon NPN Darlington Power Transistor
2SD1640
DESCRIPTION
·
Collector–Emitter Breakdown Voltage—
: V(BR)CEO = 100V(Min)
·
DC Current Gain—
: hFE = 4000(Min) @ IC= 1 A
·
100% avalanche tested
·
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·
Designed for use as output devices in complementary
general-purpose amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
120
V
VCEO
Collector-Emitter Voltage
100
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
2
A
ICM
Collector Current-Peak
3
A
PC
Collector Power Dissipation
TC=25℃
20
W
Ti
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150
℃


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