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MJ8505 Scheda tecnica(PDF) 2 Page - Inchange Semiconductor Company Limited |
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MJ8505 Scheda tecnica(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc website:www.iscsemi.com isc & iscsemi is registered trademark 2 isc Silicon NPN Power Transistor MJ8504 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC=100mA ; IB=0 800 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 5A; IB= 2A 2.0 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 10A; IB= 4A 5.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 2A 1.5 V ICBO Collector cut-off current VCBO=1400V; IE=0; TC=150℃ 0.25 mA IEBO Emitter Cutoff Current VEB= 7.0V; IC=0 1.0 mA hFE DC Current Gain IC= 1.5A ; VCE= 5V 7.5 COB Output Capacitance IE= 0; VCB= 10V; ftest=1.0kHz 90 pF Switching times;Resistive Load td Delay Time IC= 5A , VCC= 500V; IB1= 2A;tp= 50μs; VBE(off)= 5V Duty Cycle≤2.0% 50 200 ns tr Rise Time 175 2000 ns ts Storage Time 1250 4000 ns tf Fall Time 600 2000 ns |
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