TO-252-2L Plastic-Encapsulate MOSFETS

CJU10N10

N-Channel Power MOSFET

GENERAL DESCRIPTION

operation with low gate voltages. This device is suitable for use as a

load switch or in PWM applications.

FEATURE

Excellent package for good heat dissipation

Ultra low gate charge

Low reverse transfer capacitance

Fast switching capability

Avalanche energy specified

APPLICATION

Power switching application

℃ unless otherwise noted)

Parameter

Symbol

Value

Unit

Drain-Source Voltage

100

Gate-Source Voltage

±20

V

Continuous Drain Current

9.6

Pulsed Drain Current

38.4

A

Single Pulsed Avalanche Energy (note1)

150

mJ

Thermal Resistance from Junction to Ambient

100

℃/W

Junction Temperature

150

Storage Temperature Range

-55 ~+150

Maximum lead temperature for soldering purposes ,

1/8”from case for 5 seconds

260

℃

TO-252-2L

1. GATE

2. DRAIN

3. SOURCE

1 of 2

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CJU10N10