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BUX22 Scheda tecnica(PDF) 1 Page - Inchange Semiconductor Company Limited |
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BUX22 Scheda tecnica(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() isc Product Specification isc website:www.iscsemi.com isc & iscsemi is registered trademark 1 isc Silicon NPN Power Transistor BUX22 DESCRIPTION · Fast Switching Speed · High DC Current Gain-hFE=20~60@IC = 10A · Low Saturation Voltage- VCE(sat)= 1.0V(Max)@ IC = 10A APPLICATIONS · Designed for use in motor control and switching circuits applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 0.5 ℃ /W SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 300 V VCEX Collector-Emitter Voltage (VBE= -1.5V) 300 V VCEO Collector-Emitter Voltage 250 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 40 A ICM Collector Current-Peak 50 A IB Base Current-Continuous 8 A PC Collector Power Dissipation @TC=25℃ 350 W TJ Junction Temperature 200 ℃ Tstg Storage Temperature -65~200 ℃ |
Codice articolo simile - BUX22 |
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Descrizione simile - BUX22 |
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