| Motore di ricerca datesheet componenti elettronici |
|
FJB102 Scheda tecnica(PDF) 2 Page - Inchange Semiconductor Company Limited |
|
|
|||||||||||||||||||||||||||||
FJB102 Scheda tecnica(HTML) 2 Page - Inchange Semiconductor Company Limited |
|
2 / 2 page ![]() INCHANGE Semiconductor isc website:www.iscsemi.com isc & iscsemi is registered trademark 2 isc Silicon NPN Power Transistor FJB102 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNI T VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 3.0A; IB= 6mA 2.0 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 8A; IB= 80mA 2.5 V VBE(on) Base-Emitter On Voltage IC= 8A; VCE=4V 2.8 V ICBO Collector Cutoff Current VCB= 100V; IE= 0 50 μ A hFE1 DC Current Gain IC= 3A; VCE= 4V 1000 20000 hFE2 DC Current Gain IC= 8A; VCE= 4V 200 Cob Collector output capacitance VCB=10V ,IE=0,f=1MHz 200 pF |
|
|
Link URL |
| Lei ha avuto il aiuto da alldatasheet? [ DONATE ] |
Di alldatasheet | Richest di pubblicita | contatti | Privacy Policy | Collegamento alla scheda tecnica | scambio Link | Ricerca produttore All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |