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IM840C Scheda tecnica(PDF) 1 Page - ILSI America LLC

Il numero della parte IM840C
Spiegazioni elettronici  Direct pin to pin drop-in replacement for industry-standard packages
PDF  7 Pages
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Produttore elettronici  ILSI [ILSI America LLC]
Homepage  http://www.ilsiamerica.com
Logo ILSI - ILSI America LLC

IM840C Scheda tecnica(HTML) 1 Page - ILSI America LLC

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Mems Oscillator, High Performance Differential Oscillator, LVPECL and LVDS 1.000 MHz to 220.000MHz
IM840 Series
ILSI America Phone 775-851-8880 ● Fax 775-851-8882 ●email: e-mail@ilsiamerica.com ●
www.ilsiamerica.com
Specifications subject to change without notice
Rev 02/15/16_A
Page 1 of 7
Features:
MEMS Technology
Direct pin to pin drop-in replacement for industry-standard packages
0.6 pSec RMS phase jitter (random) over 12 kHz to 20 MHz bandwidth
LVPECL and LVDS output signaling types
Industry-standard package 3.2 x 2.5, and 5.0 x 3.2 mm x mm
Pb-free, RoHS and REACH compliant
Typical Applications:
Fibre Channel
Server and Storage
GPON, EPON
100M / 1G /10G Ethernet
Electronic Specifications:
Frequency Range
1.000 MHz to 220.000 MHz
Frequency Stability
See Part Number Guide
Inclusive of all changes in Operating Temp. Range, Load, and Voltage.
First Year Aging
±2.0 ppm max
+25°C ±2.0°C
10 Years Aging
±5.0 ppm max
+25°C ±2.0°C
Operating Temperature
See Part Number Guide
Supply Voltage (Vdd) ±10%
See Part Number Guide
Input Voltage High
70% of Vdd min
Pin 1, OE or
ST
Input Voltage Low
30% of Vdd max
Pin 1, OE or
ST
Input Pull-up Impedance
100 kΩ typ., 250 kΩ max
2.0 MΩ min
Pin 1, OE logic high or logic low, or
ST logic high
Pin 1,
ST logic low
Start-up Time
6.0 mSec typ., 10.0 mSec max
Measured from the time Vdd reaches its rated minimum values
Resume Time
6.0 mSec typ., 10.0 mSec max
Measured from the time
ST pin crosses 50% threshold.
Symmetry
45%/55%
LVPECL, DC and AC Characteristics
Current Consumption
61 mA typ., 69 mA max
Excluding Load Termination Current, Vdd = +3.3 V or +2.5 V
OE Disable Supply Currrent
35 mA max
OE = Low
Output Disable Leakage Current
1 µA max
OE = Low
Standby Current
100 µA max
ST = Low, for all Vdds
Maximum Output Current
30 mA max
Max average current drawn from OUT+ or OUT-
Logic “1”
Vdd -1.1 min / Vdd – 0.7 max
See figure 1(a)
Logic “0”
Vdd -1.9 min / Vdd – 1.5 max
See figure 1(a)
Output Differential Voltage
Swing
1.2 V min. 1.6V typ., 2.0 V max
See figure 1(b)
Rise/Fall Time
300 pSec typ, 700 pSec max
20% to 80%, see figure 1(a)
OE Enable/Disable Time
115 nSec max
F = 212.50 MHz – For other frequencies, T_oe = 100nSec + 3 period
RMS Period Jitter
1.2 pSec typ., 1.7 pSec max
1.2 pSec typ., 1.7 pSec max
1.2 pSec typ., 1.7 pSec max
F = 100.00 MHz, Vdd = +3.3 V or +2.5 V
F = 156.25 MHz, Vdd = +3.3 V or +2.5 V
F = 212.25 MHz, Vdd = +3.3 V or +2.5 V
RMS Phase Jitter (random)
0.60 pSec typ, 0.85 pSec max.
F = 156.25 MHz, Integration Bandwidth = 12 kHz to 20 MHz all Vdds
LVDS, DC and AC Characteristics
Current Consumption
47 mA typ., 55 mA max
Excluding Load Termination Current, Vdd = +3.3 V or +2.5 V
OE Disable Supply Current
35 mA max
OE = Low
Differential Output Voltage
250mV min, 350mA typ. 450mV
max
See Figure 2
Output Disable Leakage Current
1 µA max
OE = Low
Standby Current
100 µA max
ST = Low, for all Vdds
VOD Magnitude Change
50 mV max
See Figure 2
Offset Voltage
1.125 mV min, 1.200 mV typ.,
1.375 mV max
See Figure 2
VOS Magnitude Change
50 mV max
See Figure 2
Rise/Fall Time
495 pSec typ. 700 pSec max
20% to 80%, See Figure 2
OE Enable Time/Disable Time
115 nSec max
F = 212.25 MHz, For other Frequencies, T_oe=100nSec + 3 period
RMS Period Jitter
1.2 pSec typ, 1.7 pSec max
1.2 pSec typ, 1.7 pSec max
1.2 pSec typ, 1.7 pSec max
F = 100.00 MHz, Vdd = +3.3 V or +2.5 V
F = 156.25 MHz, Vdd = +3.3 V or +2.5 V
F = 212.25 MHz, Vdd = +3.3 V or +2.5 V
RMS Phase Jitter (random)
0.60pSec typ., 0.85 pSec max
F = 156.25 MHz, Integration Bandwidth = 12 kHz to 20 MHz all Vdds
Notes:
All min and max limits are specified over temperature and rated operating voltage with 15pF output unless otherwise stated.
Typical values are at +25ºC and nominal supply voltage.


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