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BD242C Scheda tecnica(PDF) 2 Page - Inchange Semiconductor Company Limited |
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BD242C Scheda tecnica(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc website:www.iscsemi.com isc & iscsemi is registered trademark 2 isc Silicon PNP Power Transistor BD242/A/B/C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage BD242 IC= -30mA ;IB= 0 -45 V BD242A -60 BD242B -80 BD242C -100 VCE(sat) Collector-Emitter Saturation Voltage IC= -3A; IB= -0.6A -1.2 V VBE(on) Base-Emitter On Voltage IC= -3A ; VCE= -4V -1.8 V ICES Collector Cutoff Current BD242 VCE= -45V; VBE= 0 -0.2 mA BD242A VCE= -60V; VBE= 0 BD242B VCE= -80V; VBE= 0 BD242C VCE= -100V; VBE= 0 ICEO Collector Cutoff Current BD242/A VCE= -30V;IB= 0 -0.3 mA BD242B/C VCE= -60V;IB= 0 IEBO Emitter Cutoff Current VEB= -5V; IC= 0 -1.0 mA hFE-1 DC Current Gain IC= -1A ; VCE= -4V 25 hFE-2 DC Current Gain IC= -3A ; VCE= -4V 10 fT Current-Gain—Bandwidth Product IC= -0.5A ; VCE= -10V, ftest= 1.0MHz 3.0 MHz |
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