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2N4298 Scheda tecnica(PDF) 1 Page - Inchange Semiconductor Company Limited

Il numero della parte 2N4298
Spiegazioni elettronici  isc Silicon NPN Power Transistor
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Produttore elettronici  ISC [Inchange Semiconductor Company Limited]
Homepage  http://www.iscsemi.cn
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2N4298 Scheda tecnica(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc website:www.iscsemi.com
isc & iscsemi is registered trademark
1
isc Silicon NPN Power Transistor
2N4298
DESCRIPTION
·
Excellent Safe Operating Area
·
Low Collector-Emitter Saturation Voltage
·
100% avalanche tested
·
Minimum Lot-to-Lot variations for robust device performance
and reliable operation.
APPLICATIONS
·
Designed for switching regulator applications where high
frequency and high voltage swings and required
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance,Junction to Case
7.5
℃
/W
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
500
V
VCEO
Collector-Emitter Voltage
350
V
VEBO
Emitter-Base Voltage
4
V
IC
Collector Current-Continuous
1
A
PC
Collector Power Dissipation@TC=25℃
20
W
TJ
Junction Temperature
-65~175
℃
Tstg
Storage Temperature
-65~175
℃


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