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2N4348 Scheda tecnica(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2N4348 Scheda tecnica(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc website:www.iscsemi.com isc & iscsemi is registered trademark 2 isc Silicon NPN Power Transistor 2N4348 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN MAX UNIT VCEO(SUS)* Collector-Emitter Sustaining Voltage IC=200mA; IB= 0 120 V ICEO Collector Cutoff Current VCE=100V;IB= 0 200 mA IEBO Emitter Cutoff Current VEB= 7V; IC= 0 5 mA VCE(sat)-1* Collector-Emitter Saturation Voltage IC= 5A; IB= 500mA 1.0 V VCE(sat)-2* Collector-Emitter Saturation Voltage IC= 10A; IB= 1.25mA 2.0 V VBE(ON)-1* Base-Emitter On Voltage IC=5A;VCE= 4V 2.0 V VBE(ON)-2* Base-Emitter On Voltage IC=10A;VCE= 4V 3.0 V hFE-1* DC Current Gain IC=5A; VCE= 4V 15 60 hFE-2* DC Current Gain IC= 10A; VCE= 4V 10 *:Pulse test:Pulse width=300us,duty cycle≤2% |
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