Si9150

Vishay Siliconix

Document Number: 70020

S-40752—Rev. F, 19-Apr-04

www.vishay.com

5

A capacitor from this pin to ground is charged until it reaches

2.5 V, at which point the capacitor is rapidly discharged. The

resulting sawtooth with about 1 V added is compared to the

input voltage at COMP to determine whether P-GATE and

N-GATE should be high or low. The maximum recommended

The IC applies 2.5 V to this pin, and the current is mirrored and

applied to Pin 9 while charging the capacitor. The minimum

Pin 11: GND

Since the Si9150 has a high-side current limit, it is important

power MOSFET. For noise immunity, it is best to separate the

logic ground from the power ground. The logic ground should

grounds may be connected by a path that is long compared to

p-channel MOSFET.

Pin 12: N-GATE

This pin is used to drive the application’s n-channel MOSFET.

When turning the n-channel MOSFET off, the p-channel

MOSFET will not be turned on until N-GATE is within a few volts

of ground. This pin is low while either EN or STBY is low.

Pin 13: P-GATE

This pin is used to drive the application’s p-channel MOSFET.

The break before make circuitry for the P-GATE is

complimentary to that for the N-GATE. This pin is high while

either EN or STBY is low.

This pin powers the IC. The connection between this pin and

the source of the p-channel FET should be as short as

practical. Read Pin 11’s description for bypassing

suggestions.

APPLICATIONS

FIGURE 1.

Typical Application Circuit

Si9150

11

12

13

14

2

3

4

1

8

9

10

5

6

7

5600 pF

0.039 mF

3.32 kW

220 pF

47 pF

1 mF

200 pF

56.2 kW

+5 V

43 mH

10MQ060

1000 pF

14.7 kW

33.2 kW

33.2 kW

Si9943

100 mF

(20 V)

100 mF

1 kW

33 pF