If Military/Aerospace specified devices are required,

please contact the National Semiconductor Sales Office/

Distributors for availability and specifications.

Collector to Emitter Voltage

LM195

42V

LM395

36V

Collector to Base Voltage

LM195

42V

LM395

36V

Base to Emitter Voltage (Forward)

LM195

LM395

42V

36V

Base to Emitter Voltage (Reverse)

20V

Collector Current

Internally Limited

Power Dissipation

Internally Limited

Operating Temperature Range

LM195

−55˚C to +150˚C

LM395

0˚C to +125˚C

Storage Temperature Range

−65˚C to +150˚C

Lead Temperature

(Soldering, 10 sec.)

260˚C

Preconditioning

100% Burn-In In Thermal Limit

Electrical Characteristics

(Note 2)

Parameter

Conditions

LM195

LM395

Units

Min

Typ

Max

Min

Typ

Max

Collector-Emitter Operating Voltage

I

42

36

V

(Note 4)

Base to Emitter Breakdown Voltage

0

≤ V

42

36

60

V

Collector Current

TO-3, TO-220

V

1.2

2.2

1.0

2.2

A

TO-5

V

1.2

1.8

1.0

1.8

A

Saturation Voltage

I

1.8

2.0

1.8

2.2

V

Base Current

0

≤ I

3.0

5.0

3.0

10

µA

0

≤ V

Quiescent Current (I

2.0

5.0

2.0

10

mA

0

≤ V

Base to Emitter Voltage

I

0.9

0.9

V

Switching Time

V

500

500

ns

T

Thermal Resistance Junction to

TO-3 Package (K)

2.3

3.0

2.3

3.0

˚C/W

Case (Note 3)

TO-5 Package (H)

12

15

12

15

˚C/W

TO-220 Package (T)

4

6

˚C/W

Note 1: “Absolute Maximum Ratings” indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is

functional, but do not guarantee specific performance limits.

Note 2: Unless otherwise specified, these specifications apply for −55˚C

Note 3: Without a heat sink, the thermal resistance of the TO-5 package is about +150˚C/W, while that of the TO-3 package is +35˚C/W.

Note 4: Selected devices with higher breakdown available.

Note 5: Refer to RETS195H and RETS195K drawings of military LM195H and LM195K versions for specifications.

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