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TLE6280GP Scheda tecnica(PDF) 9 Page - Infineon Technologies AG |
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TLE6280GP Scheda tecnica(HTML) 9 Page - Infineon Technologies AG |
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9 / 25 page ![]() Datasheet TLE6280GP 9 2007-07-19 Estimation of power dissipation within the driver IC The power dissipation within the driver IC is strongly dependent upon the use of the driver and the external components. Nevertheless, a rough estimation of the worst case power dis- sipation is possible. Worst case calculation is: PD = (Qgate*n*const* fPWM + IVS(open)) * VVs - PRGate With: PD = Power dissipation in the driver IC fPWM = Switching frequency Qgate = Total gate charge of used MOSFET at 10V VGS n = number of switched Mosfets const = constant considering some leakage current in the driver and the power dissipa- tion caused by the charge pump (nominally = 2) IVS(open) = Current consumption of driver without connected Mosfets during switching VVS = Voltage at Vs PRGate = Power dissipation in the external gate resistors This value can be reduced dramatically by the use of external gate resistors. Recommended start up procedure To assure the driver to be active and functional, a special initialization procedure is required whenever the gate drive is enabled (VMFP is changed from LO to HI). Every time the driver is enabled, after 10 µs or later, positive-going transition signals at all ILx pins are required in or- der to ensure proper start-up of the output driver. This procedure assures a proper wake up the device and allowes to fill the bootstrap capacitors. Not filling the bootstrap capacitors might lead to low Gate-Source voltages mainly in highside and can cause a short circuit de- tection when the highside switches are activated. Not changing the ILx input signal after enabling the device may cause the lowside outputs to stay in off conditions. |
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