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BSB012NE2LXI Scheda tecnica(PDF) 10 Page - Infineon Technologies AG |
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BSB012NE2LXI Scheda tecnica(HTML) 10 Page - Infineon Technologies AG |
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10 / 14 page ![]() 10 OptiMOSTMPower-MOSFET,25V BSB012NE2LXI Rev.2.1,2015-09-09 Final Data Sheet Diagram13:Avalanchecharacteristics tAV[µs] 100 101 102 103 100 101 102 25 °C 100 °C 125 °C IAS=f(tAV);RGS=25 Ω;parameter:Tj(start) Diagram14:Typ.gatecharge Qgate[nC] 0 20 40 60 0 2 4 6 8 10 12 20 V 12 V 5 V VGS=f(Qgate);ID=30Apulsed;parameter:VDD Diagram15:Typ.Drain-sourceleakagecurrent VDS[V] 0 5 10 15 20 10-6 10-5 10-4 10-3 10-2 125 °C 100 °C 75 °C 25 °C IDSS=f(VDS);VGS=0V;parameter:Tj Gate charge waveforms |
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