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BSB008NE2LX Scheda tecnica(PDF) 5 Page - Infineon Technologies AG

Il numero della parte BSB008NE2LX
Spiegazioni elettronici  Metal Oxide Semiconductor Field Effect Transistor
PDF  14 Pages
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Produttore elettronici  INFINEON [Infineon Technologies AG]
Homepage  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

BSB008NE2LX Scheda tecnica(HTML) 5 Page - Infineon Technologies AG

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5
OptiMOSTMPower-MOSFET,25V
BSB008NE2LX
Rev.2.0,2015-01-20
Final Data Sheet
4Electricalcharacteristics
Table4Staticcharacteristics
Values
Min.
Typ.
Max.
Parameter
Symbol
Unit Note/TestCondition
Drain-source breakdown voltage
V(BR)DSS
25
-
-
V
VGS=0V,ID=1mA
Gate threshold voltage
VGS(th)
1.2
-
2
V
VDS=VGS,ID=250µA
Zero gate voltage drain current
IDSS
-
-
0.1
10
10
100
µA
VDS=25V,VGS=0V,Tj=25°C
VDS=25V,VGS=0V,Tj=125°C
Gate-source leakage current
IGSS
-
10
100
nA
VGS=20V,VDS=0V
Drain-source on-state resistance
RDS(on)
-
-
0.75
0.6
1.0
0.8
m
Ω
VGS=4.5V,ID=25A
VGS=10V,ID=30A
Gate resistance
RG
0.3
0.5
1.0
Ω
-
Transconductance
gfs
120
240
-
S
|VDS|>2|ID|RDS(on)max,ID=30A
Table5Dynamiccharacteristics
Values
Min.
Typ.
Max.
Parameter
Symbol
Unit Note/TestCondition
Input capacitance
Ciss
-
12000 16000 pF
VGS=0V,VDS=12V,f=1MHz
Output capacitance
Coss
-
3800
5100
pF
VGS=0V,VDS=12V,f=1MHz
Reverse transfer capacitance
Crss
-
3300
-
pF
VGS=0V,VDS=12V,f=1MHz
Turn-on delay time
td(on)
-
12.6
-
ns
VDD=12V,VGS=10V,ID=30A,
RG,ext=1.6
Ω
Rise time
tr
-
47.2
-
ns
VDD=12V,VGS=10V,ID=30A,
RG,ext=1.6
Ω
Turn-off delay time
td(off)
-
75
-
ns
VDD=12V,VGS=10V,ID=30A,
RG,ext=1.6
Ω
Fall time
tf
-
32.4
-
ns
VDD=12V,VGS=10V,ID=30A,
RG,ext=1.6
Ω
Table6Gatechargecharacteristics1)
Values
Min.
Typ.
Max.
Parameter
Symbol
Unit Note/TestCondition
Gate to source charge
Qgs
-
27
36
nC
VDD=12V,ID=30A,VGS=0to4.5V
Gate charge at threshold
Qg(th)
-
19
-
nC
VDD=12V,ID=30A,VGS=0to4.5V
Gate to drain charge
Qgd
-
73
110
nC
VDD=12V,ID=30A,VGS=0to4.5V
Switching charge
Qsw
-
81
-
nC
VDD=12V,ID=30A,VGS=0to4.5V
Gate charge total
Qg
-
146
194
nC
VDD=12V,ID=30A,VGS=0to4.5V
Gate plateau voltage
Vplateau
-
2.2
-
V
VDD=12V,ID=30A,VGS=0to4.5V
Gate charge total
Qg
-
258
343
nC
VDD=12V,ID=30A,VGS=0to10V
Gate charge total, sync. FET
Qg(sync)
-
88
-
nC
VDS=0.1V,VGS=0to4.5V
Output charge
Qoss
-
74
98
nC
VDD=12V,VGS=0V
1) See
″Gate charge waveforms″ for parameter definition



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