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BFS481 Scheda tecnica(PDF) 1 Page - Infineon Technologies AG |
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BFS481 Scheda tecnica(HTML) 1 Page - Infineon Technologies AG |
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1 / 6 page ![]() 2013-06-18 1 BFS481 1 6 2 3 5 4 Low Noise Silicon Bipolar RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA • fT = 8 GHz, NFmin = 0.9 dB at 900 MHz • Two (galvanic) internal isolated Transistors in one package • For orientation in reel see package information below • Easy to use Pb-free (RoHS compliant) and halogen free industry standard package with visible leads • Qualification report according to AEC-Q101 available EHA07196 6 54 3 2 1 C1 E2 B2 C2 E1 B1 TR1 TR2 ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type Marking Pin Configuration Package BFS481 RFs 1=B 2=E 3=C 4=B 5=E 6=C SOT363 |
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