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MCP73871-2CCI/ML Scheda tecnica(PDF) 7 Page - Microchip Technology |
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MCP73871-2CCI/ML Scheda tecnica(HTML) 7 Page - Microchip Technology |
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7 / 40 page ![]() 2008-2013 Microchip Technology Inc. DS20002090C-page 7 MCP73871 Charge Transistor ON-Resistance ON-Resistance RDSON_ — 200 — m VDD = 4.5V, TJ = 105°C BAT-to-OUT Pass Transistor ON-Resistance ON-Resistance RDS_ON — 200 — m VDD = 4.5V, TJ = 105°C Battery Discharge Current Output Reverse Leakage Current IDISCHARGE —30 40 μA Shutdown (VBAT < VDD < VUVLO) —30 40 μA Shutdown (0 < VDD < VBAT) —30 40 μAVBAT = Power Out, No Load — -6 -13 μA Charge Complete Status Indicators - STAT1 (LBO), STAT2, PG Sink Current ISINK —16 35 mA Low Output Voltage VOL — 0.4 1 V ISINK = 4 mA Input Leakage Current ILK — 0.01 1 μA High Impedance, VDD on pin Low Battery Indicator (LBO) Low Battery Detection Threshold VLBO — Disable — VBAT > VIN, PG = Hi-Z TA = -5°C to +55°C 2.85 3.0 3.15 V 2.95 3.1 3.25 V 3.05 3.2 3.35 V Low Battery Detection Hysteresis VLBO_HYS — 150 — mV VBAT Low-to-High PROG1 Input (PROG1) Charge Impedance Range RPROG 1 — 20 k PROG3 Input (PROG3) Termination Impedance Range RPROG 5 — 100 k PROG2 Input (PROG2) Input High Voltage Level VIH 1.8 — — V Input Low Voltage Level VIL — — 0.8 V Input Leakage Current ILK — 0.01 1 μAVPROG2 = VDD Timer Enable (TE) Input High Voltage Level VIH 1.8 — — V Note 1 Input Low Voltage Level VIL — — 0.8 V Note 1 Input Leakage Current ILK — 0.01 1 μAVTE = VDD DC CHARACTERISTICS (CONTINUED) Electrical Specifications: Unless otherwise indicated, all limits apply for VIN = VREG + 0.3V to 6V, TA = -40°C to +85°C. Typical values are at +25°C, VIN = [VREG (typical) + 1.0V] Parameters Sym Min Typ Max Units Conditions Note 1: The value is ensured by design and not production tested. 2: The maximum available charge current is also limited by the value set at PROG1 input. |
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