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STM32L475VC Scheda tecnica(PDF) 115 Page - STMicroelectronics

Il numero della parte STM32L475VC
Spiegazioni elettronici  Ultra-low-power ARM Cortex-M4 32-bit MCUFPU, 100DMIPS, up to 1MB Flash, 128 KB SRAM, USB OTG FS, analog, audio
PDF  193 Pages
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Produttore elettronici  STMICROELECTRONICS [STMicroelectronics]
Homepage  http://www.st.com
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STM32L475VC Scheda tecnica(HTML) 115 Page - STMicroelectronics

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STM32L475xx
Electrical characteristics
181
6.3.8
Internal clock source characteristics
The parameters given in Table 48 are derived from tests performed under ambient
temperature and supply voltage conditions summarized in Table 22: General operating
conditions. The provided curves are characterization results, not tested in production.
High-speed internal (HSI16) RC oscillator
Table 48. HSI16 oscillator characteristics(1)
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
fHSI16
HSI16 Frequency
VDD=3.0 V, TA=30 °C
15.88
-
16.08
MHz
TRIM
HSI16 user trimming step
Trimming code is not a
multiple of 64
0.2
0.3
0.4
%
Trimming code is a
multiple of 64
-4
-6
-8
DuCy(HSI16)(2) Duty Cycle
-
45
-
55
%
∆Temp(HSI16)
HSI16 oscillator frequency
drift over temperature
TA= 0 to 85 °C
-1
-
1
%
TA= -40 to 125 °C
-2
-
1.5
%
∆VDD(HSI16)
HSI16 oscillator frequency
drift over VDD
VDD=1.62 V to 3.6 V
-0.1
-
0.05
%
tsu(HSI16)(2)
HSI16 oscillator start-up
time
--
0.8
1.2
μs
tstab(HSI16)(2)
HSI16 oscillator
stabilization time
--
3
5
μs
IDD(HSI16)(2)
HSI16 oscillator power
consumption
-
-
155
190
μA
1. Guaranteed by characterization results.
2. Guaranteed by design.



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