If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/

Distributors for availability and specifications. (T

LM3046

Each

Total

Units

Transistor

Package

Power Dissipation:

T

300

750

mW

T

300

750

mW

T

Derate at 6.67

mW/˚C

T

mW

T

mW/˚C

Collector to Emitter Voltage, V

CEO

15

V

Collector to Base Voltage, V

CBO

20

V

Collector to Substrate Voltage, V

20

V

Emitter to Base Voltage, V

EBO

5V

Collector Current, I

C

50

mA

Operating Temperature Range

−40˚C to +85˚C

Storage Temperature Range

−65˚C to +85˚C

Soldering Information

Dual-In-Line Package Soldering (10 Sec.)

260˚C

Small Outline Package

Vapor Phase (60 Seconds)

215˚C

Infrared (15 Seconds)

220˚C

See AN-450 “Surface Mounting Methods and Their Effect on Product Reliability” for other methods of soldering surface mount de-

vices.

Electrical Characteristics

(T

Parameter

Conditions

Limits

Units

Min

Typ

Max

Collector to Base Breakdown Voltage (V

60

V

Collector to Emitter Breakdown Voltage (V

24

V

Collector to Substrate Breakdown

I

60

V

Voltage (V

Emitter to Base Breakdown Voltage (V

7

V

Collector Cutoff Current (I

0.002

40

nA

Collector Cutoff Current (I

0.5

µA

Static Forward Current Transfer

V

I

100

Ratio (Static Beta) (h

40

100

I

54

Input Offset Current for Matched

V

0.3

2

µA

Pair Q

Base to Emitter Voltage (V

I

0.715

V

I

0.800

Magnitude of Input Offset Voltage for

V

0.45

5

mV

Differential Pair |V

Magnitude of Input Offset Voltage for Isolated

Transistors |V

|V

V

0.45

5

mV

Temperature Coefficient of Base to

Emitter Voltage

V

−1.9

mV/˚C

Collector to Emitter Saturation Voltage (V

0.23

V

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