2SD1289 datasheet(2/2 Pages) ISC

Il numero della parte	2SD1289

Spiegazioni elettronici	isc Silicon NPN Power Transistor

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Produttore elettronici	ISC [Inchange Semiconductor Company Limited]

Homepage	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc website：www.iscsemi.com

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isc Silicon NPN Power Transistor

2SD1289

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX UNIT

VCE(sat)NOTE Collector-Emitter Saturation Voltage

IC= 5A; IB= 0.5A

0.65

1.5

VBE(sat)NOTE Base-Emitter Saturation Voltage

IC= 5A; IB= 0.5A

1.25

2.0

ICBO

Collector Base Cutoff Current

VCB=120V; IE= 0

IEBO

Emitter Cutoff Current

VEB= 5V; IC= 0

hFE -1NOTE

DC Current Gain

IC= 50mA ; VCE= 5V

hFE -2NOTE

DC Current Gain

IC= 1A ; VCE= 5V

320

Current-Gain—Bandwidth Product

IC= 1A; VCE= 5V

MHz

COB

Output Capacitance

IE= 0 ; VCB= 10V,ftest= 1MHz

120

NOTE:Pulse test PW≤350us,duty cycle ≤2%



hFE1 Classifications

60-120

100-200 160-320

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