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BD237 Scheda tecnica(PDF) 1 Page - Inchange Semiconductor Company Limited |
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BD237 Scheda tecnica(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() INCHANGE Semiconductor isc website:www.iscsemi.com isc & iscsemi is registered trademark 1 isc Silicon NPN Power Transistor BD237 DESCRIPTION · DC Current Gain- : hFE= 40(Min)@ IC= 0.15A · Collector-Emitter Sustaining Voltage - : VCEO(SUS)= 80V(Min) · Complement to Type BD238 · Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · Designed for use in 5~10 watt audio amplifiers and drivers utilizing complementary or quasi complementary circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 2.0 A IB Base Current-Continuous 1.0 A PC Collector Power Dissipation @ TC=25℃ 25 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 5.0 ℃ /W |
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