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SST25VF080B Scheda tecnica(PDF) 13 Page - Microchip Technology |
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SST25VF080B Scheda tecnica(HTML) 13 Page - Microchip Technology |
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13 / 32 page ![]() 2015 Microchip Technology Inc. DS20005045C-page 13 SST25VF080B 4.4.8 32-KBYTE AND 64-KBYTE BLOCK- ERASE The 32-KByte Block-Erase instruction clears all bits in the selected 32 KByte block to FFH. A Block-Erase instruction applied to a protected memory area will be ignored. The 64-KByte Block-Erase instruction clears all bits in the selected 64 KByte block to FFH. A Block-Erase instruction applied to a protected memory area will be ignored. Prior to any Write operation, the Write-Enable (WREN) instruction must be executed. CE# must remain active low for the duration of any command sequence. The 32-KByte Block-Erase instruction is initiated by executing an 8-bit command, 52H, followed by address bits [A23-A0]. Address bits [AMS-A15] (AMS = Most Sig- nificant Address) are used to determine block address (BAX), remaining address bits can be VIL or VIH. CE# must be driven high before the instruction is executed. The 64-KByte Block-Erase instruction is initiated by executing an 8-bit command D8H, followed by address bits [A23-A0]. Address bits [AMS-A15] are used to determine block address (BAX), remaining address bits can be VIL or VIH. CE# must be driven high before the instruction is executed. The user may poll the Busy bit in the software status register or wait TBE for the completion of the internal self-timed 32- KByte Block-Erase or 64-KByte Block-Erase cycles. See Figures 4-11 and 4-12 for the 32-KByte Block- Erase and 64-KByte Block-Erase sequences. FIGURE 4-11: 32-KBYTE BLOCK-ERASE SEQUENCE FIGURE 4-12: 64-KBYTE BLOCK-ERASE SEQUENCE CE# SO SI SCK ADDR 01 2 3 4 5 6 7 8 ADDR ADDR 52 HIGH IMPEDANCE 15 16 23 24 31 MODE 0 MODE 3 1296 32KBklEr.0 MSB MSB CE# SO SI SCK ADDR 01 2 3 4 5 6 7 8 ADDR ADDR D8 HIGH IMPEDANCE 15 16 23 24 31 MODE 0 MODE 3 1296 63KBlkEr.0 MSB MSB |
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