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DS1135LZ2012 Scheda tecnica(PDF) 4 Page - Dallas Semiconductor |
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DS1135LZ2012 Scheda tecnica(HTML) 4 Page - Dallas Semiconductor |
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4 / 6 page ![]() DS1135-L 4 of 6 ABSOLUTE MAXIMUM RATINGS* Voltage on Any Pin Relative to Ground -1.0V to +6.0 V Operating Temperature -40°C to +85°C Storage Temperature -55 °C to +125°C Soldering Temperature See J-STD-020A specification Short Circuit Output Current 50mA for 1 second * This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operation sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods of time may affect reliability. DC ELECTRICAL CHARACTERISTICS (-40 °C to +85°C;VCC=2.7-3.6V) PARAMETER SYMBOL TEST CONDITION MIN TYP MAX UNITS Supply Voltage VCC 2.7 3.3 3.6 V Active Current ICC VCC =3.6V Period=1 ms 10 mA High Level Input Voltage VIH 2.0 VCC +0.5 V Low Level Input Voltage VIL -0.5 0.8 V Input Leakage IL 0V≤VI ≤VCC -1.0 +1.0 mA High Level Output Current ICC VCC =2.7V VOH =2V -1.0 mA Low Level Output Current ICC VCC =2.7V VOL=0.4V 8mA AC ELECTRICAL CHARACTERISTICS (-40 °C to +85°C;VCC=2.7-3.6V) PARAMETER SYMBOL MIN TYP MAX UNITS NOTES Period tPERIOD 2 (tWI )ns Input Pulse Width tWI 100% of Delay Value ns Input-to-Output Delay tPLH, tPHL See Table 1 ns Output Rise or Fall Time tOF, tOR 2.0 2.5 ns Power-up Time tPU 1ms 2 CAPACITANCE (TA=25 °C) PARAMETER SYMBOL MIN TYP MAX UNITS NOTES Input Capacitance CIN 10 pF |
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