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SB3150L-SMB-R Scheda tecnica(PDF) 2 Page - Unisonic Technologies

Il numero della parte SB3150L-SMB-R
Spiegazioni elettronici  High current capability
PDF  3 Pages
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Produttore elettronici  UTC [Unisonic Technologies]
Homepage  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

SB3150L-SMB-R Scheda tecnica(HTML) 2 Page - Unisonic Technologies

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SB3150
Preliminary
DIODE
UNISONICTECHNOLOGIESCO.,LTD
2 of 3
www.unisonic.com.tw
QW-R202-063.a
ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Repetitive Peak Reverse Voltage
VRRM
150
V
Working Peak Reverse Voltage
VRWM
150
V
DC Blocking Voltage
VR
150
V
Average Rectified Output Current
IO
3.0
A
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
rated load (JEDEC Method)
IFSM
110
A
Junction Temperature Range
TJ
-65 ~ +150
°C
Storage Temperature Range
TSTG
-65 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
RATINGS
UNIT
Typical Thermal Resistance
θJL
20
°C/W
ELECTRICAL CHARACTERISTICS (PER LEG) (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
Reverse Breakdown Voltage
V(BR)R
IR=0.50mA
150
V
Instantaneous Forward Voltage Drop
VFM
IF=3.0A, TJ=25°C
0.89
V
Rated DC Voltage, TJ=25°C
1.0
mA
Peak Reverse Current at Rated DC
Blocking Voltage
IRM
Rated DC Voltage, TJ=125°C
7.0
mA
Junction Capacitance (Note 2)
CJ
250
pF
Notes: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%.
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.



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