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2SD74 Scheda tecnica(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2SD74 Scheda tecnica(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() INCHANGE Semiconductor isc website:www.iscsemi.com isc & iscsemi is registered trademark 1 isc Silicon NPN Power Transistor 2SD74 DESCRIPTION · Collector-Emitter Breakdown Voltage- : V(BR)CEO= 90V(Min) · Good Linearity of hFE · Wide Area of Safe Operation · 100% avalanche tested · Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · Designed for use in general purpose power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 90 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak 8 A PC Collector Power Dissipation @ TC=25℃ 60 W TJ Junction Temperature 175 ℃ Tstg Storage Temperature Range -65~175 ℃ |
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