MX66C1024

7

P/N DS00040

Rev. 1.0, November 1999

Macronix America Inc., USA 1338 Ridder Park Dr., San Jose, CA 95131

Tel (408)453-8088 Fax (408)451-0876 http: www.macronix.com

NOTES:

1. WE must be high during address transitions.

2. The internal write time of the memory is defined by the overlap of CE1 and CE2 active and WE low.

All signals must be active to initiate a write and any one signal can terminate a write by going

inactive. The data input setup and hold timing should be referenced to the second transition edge

of the signal that terminates the write.

3. TWR is measured from the earlier of CE1 or WE going high or CE2 going low at the end of write

cycle.

4. During this period, DQ pins are in the output state so that the input signals of opposite phase to the

outputs must not be applied.

5. If the CE1 low transition or the CE2 high transition occurs simultaneously with the WE low

transitions or after the WE transition, output remain in a high impedance state.

).

9. If CE1 is low and CE2 is high during this period, DQ pins are in the output state. Then the data input

signals of opposite phase to the outputs must not be applied to them.

10. Transition is measured

parameter is guaranteed but not 100% tested.

WRITE CYCLE2

(1,6)

±

(11)

(11)

(2)

(4,10)

(3)

D

IN

D

OUT

WE

CE2

CE1

ADDRESS

(5)

(5)

(7)

(8)

(8)