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2SD320 Scheda tecnica(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2SD320 Scheda tecnica(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() INCHANGE Semiconductor isc website:www.iscsemi.com isc & iscsemi is registered trademark 1 isc Silicon NPN Power Transistor 2SD320 DESCRIPTION · Collector-Emitter Breakdown Voltage- : V(BR) CEO= 230V(Min) · Excellent Safe Operating Area · Low Collector-Emitter Saturation Voltage- : VCE(sat)= 2.0V(Max)@ IC = 2A · Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · Designed for use in general purpose amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 230 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 2 A ICM Collector Current-Peak 5 A IB Base Current 1 A PC Collector Power Dissipation@TC=25℃ 50 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -65~150 ℃ |
Codice articolo simile - 2SD320 |
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Descrizione simile - 2SD320 |
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