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2SD715 Scheda tecnica(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SD715 Scheda tecnica(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc website:www.iscsemi.com isc & iscsemi is registered trademark 2 isc Silicon NPN Darlington Power Transistor 2SD715 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA ;IB=0 120 V VCE(sat) Collector-Emitter Saturation Voltage IC= 6A, IB= 12mA 1.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 6A, IB= 12mA 2.0 V VBE(on) Base-Emitter On Voltage IC= 6A ; VCE= 3V 2.5 V ICBO Collector Cutoff current VCB= 110V, IE= 0 100 μ A IEBO Emitter Cutoff Current VEB= 8V; IC= 0 5 mA hFE-1 DC Current Gain IC= 1A; VCE= 4V 2000 24000 hFE-2 DC Current Gain IC= 6A; VCE= 4V 750 fT Current-Gain—Bandwidth Product IC= 0.5A ; VCE= 10V 30 MHz |
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