2SD962 datasheet(1/2 Pages) ISC

Il numero della parte	2SD962

Spiegazioni elettronici	isc Silicon NPN Darlington Power Transistor

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Produttore elettronici	ISC [Inchange Semiconductor Company Limited]

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isc Silicon NPN Darlington Power Transistor

2SD962

DESCRIPTION

·High Collector-Emitter Breakdown Voltage-

: V(BR)CEO = 200V(Min)

·High DC Current Gain

·High Reliability

·Good Linearity of hFE

·Wide Area of Safe Operation

·Minimum Lot-to-Lot variations for robust device

performance and reliable operation

APPLICATIONS

·Designed for series regulators ,color TV, power supplies and

similar devices applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

200

V

VCEO

Collector-Emitter Voltage

200

V

VEBO

Emitter-Base Voltage

6

V

IC

Collector Current-Continuous

5

A

ICP

Collector Current-Peak

8

A

PC

Collector Power Dissipation

@TC=25℃

80

W

Tj

Junction Temperature

150

℃

Tstg

Storage Temperature Range

-55~150

℃

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