MJD41C datasheet(3/7 Pages) ONSEMI

3 / 7 page

MJD41C (NPN), MJD42C (PNP)

www.onsemi.com

TYPICAL CHARACTERISTICS

0.06

IC, COLLECTOR CURRENT (AMP)

0.2

0.4

500

VCE = 2 V

TJ = 150°C

0.3

°C

-55

°C

0.1

0.6

Figure 1. Power Derating

T, TEMPERATURE (

°C)

100

125

150

Figure 2. Switching Time Test Circuit

IC, COLLECTOR CURRENT (AMP)

TJ = 25°C

VCC = 30 V

IC/IB = 10

0.7

0.5

0.3

0.2

0.1

0.07

0.05

0.03

td @ VBE(off) ≈ 5 V

Figure 3. DC Current Gain

2.5

1.5

0.5

300

200

100

0.02

0.06

0.2

0.4

0.1

0.6

Figure 4. Turn−On Time

+11 V

-9 V

-4 V

SCOPE

VCC

+30 V

tr, tf ≤ 10 ns

DUTY CYCLE = 1%

RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS

D1 MUST BE FAST RECOVERY TYPE, e.g.:

MSB5300 USED ABOVE IB ≈ 100 mA

MSD6100 USED BELOW IB ≈ 100 mA

REVERSE ALL POLARITIES FOR PNP.

TA SURFACE MOUNT

Figure 5. Base Emitter Voltage vs. Collector

Current

Figure 6. Base Emitter Saturation Voltage vs.

Collector Current

IC, COLLECTOR CURRENT (A)

0.1

0.01

0.2

0.4

0.6

0.8

1.0

1.2

1.4

0.1

0.01

0.2

0.4

0.6

0.8

1.0

1.2

1.4

VCE = 4 V

TA = 150°C

°C

−40

°C

−55

°C

IC/IB = 10

TA = 150°C

°C

−40

°C

−55

°C

MJD41C Scheda tecnica(PDF) 3 Page - ON Semiconductor

MJD41C Scheda tecnica(HTML) 3 Page - ON Semiconductor

Html Pages

1 2 3 4 5 6 7

Scheda tecnica Scarica

Link URL