MJE182G. datasheet(2/6 Pages) ONSEMI

2 / 6 page

MJE170G, MJE171G, MJE172G (PNP), MJE180G, MJE181G, MJE182G (NPN)

http://onsemi.com

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction−to−Case

RqJC

_C/W

Thermal Resistance, Junction−to−Ambient

RqJA

83.4

_C/W

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector−Emitter Sustaining Voltage

(IC = 10 mAdc, IB = 0)

MJE170G, MJE180G

MJE171G, MJE181G

MJE172G, MJE182G

VCEO(sus)

−

Vdc

Collector Cutoff Current

(VCB = 60 Vdc, IE = 0)

MJE170G, MJE180G

(VCB = 80 Vdc, IE = 0)

MJE171G, MJE181G

(VCB = 100 Vdc, IE = 0)

MJE172G, MJE182G

(VCB = 60 Vdc, IE = 0, TC = 150°C)

MJE170G, MJE180G

(VCB = 80 Vdc, IE = 0, TC = 150°C)

MJE171G, MJE181G

(VCB = 100 Vdc, IE = 0, TC = 150°C)

MJE172G, MJE182G

ICBO

−

0.1

mAdc

Emitter Cutoff Current

(VBE = 7.0 Vdc, IC = 0)

IEBO

−

0.1

mAdc

ON CHARACTERISTICS

DC Current Gain

(IC = 100 mAdc, VCE = 1.0 Vdc)

(IC = 500 mAdc, VCE = 1.0 Vdc)

(IC = 1.5 Adc, VCE = 1.0 Vdc)

hFE

250

−

Collector−Emitter Saturation Voltage

(IC = 500 mAdc, IB = 50 mAdc)

(IC = 1.5 Adc, IB = 150 mAdc)

(IC = 3.0 Adc, IB = 600 mAdc)

VCE(sat)

−

0.3

0.9

1.7

Vdc

Base−Emitter Saturation Voltage

(IC = 1.5 Adc, IB = 150 mAdc)

(IC = 3.0 Adc, IB = 600 mAdc)

VBE(sat)

−

1.5

2.0

Vdc

Base−Emitter On Voltage

(IC = 500 mAdc, VCE = 1.0 Vdc)

VBE(on)

−

1.2

Vdc

DYNAMIC CHARACTERISTICS

Current−Gain − Bandwidth Product (Note 1)

(IC = 100 mAdc, VCE = 10 Vdc, ftest = 10 MHz)

−

MHz

Output Capacitance

(VCB = 10 Vdc, IE = 0, f = 0.1 MHz)

MJE171G/MJE172G

MJE181G/MJE182G

Cob

−

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

1. fT = ⎪hfe⎪• ftest.

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