MB91F467DA datasheet(96/137 Pages) CYPRESS

96 / 137 page

Document Number: 002-04613 Rev. *A

Page 96 of 137

MB91460D Series

15.6 FLASH memory program/erase characteristics

15.6.1 MB91F465DA

(TA = 25oC, Vcc = 5.0V)

*1:This value was converted from the results of evaluating the reliability of the technology (using Arrhenius equation to convert high

temperature measurements into normalized value at 85oC)

15.6.2 MB91F467Dx

(TA = 25oC, Vcc = 5.0V)

*1: This value was converted from the results of evaluating the reliability of the technology (using Arrhenius equation to convert high

temperature measurements into normalized value at 85oC)

Parameter

Value

Unit

Remarks

Min

Typ

Max

Sector erase time

0.9

3.6

Erasure programming time not included

Chip erase time

n*0.9

n*3.6

n is the number of Flash sector of the device

Word (16-bit width) programming

time

370

μs

System overhead time not included

Programme/Erase cycle

10 000

cycle

Flash data retention time

year

Parameter

Value

Unit

Remarks

Min

Typ

Max

Sector erase time

0.5

2.0

Erasure programming time not included

Chip erase time

n*0.5

n*2.0

n is the number of Flash sector of the device

Word (16 or 32-bit width) program-

ming time

100

μs

System overhead time not included

Programme/Erase cycle

10 000

cycle

Flash data retention time

year

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