ZLED7x30 Datasheet

© 2016 Integrated Device Technology, Inc.

6

April 20, 2016

1.3

Electrical Parameters

otherwise noted.

Production testing of the chip is performed at 25°C unless otherwise stated. Functional operation of the chip and

specified parameters at other temperatures are guaranteed by design, characterization, and process control.

No.

PARAMETER

SYMBOL

CONDITIONS

MIN

TYP

MAX

UNIT

1.3.1

Quiescent supply current

Output off

70

120

140

μA

Output switching

450

600

μA

1.3.2

Mean current sense

threshold voltage

95

100

105

mV

1.3.3

Sense threshold hysteresis

±15

%

1.3.4

8

μA

1.3.5

Under-voltage lockout

threshold

5.05

5.85

6.65

V

1.3.6

Under-voltage lockout

hysteresis

∆V

UVLO

1.65

V

1.3.7

Ratio of output current

level to initial current in

Dimming Mode 1

DIM1: Floating

DIM2: GND

Level 1

100

%

Level 2

50

%

Level 3

17

20

23

%

1.3.8

Ratio of output current

level to initial current in

Dimming Mode 2

DIM1: GND

DIM2: Floating

Level 1

100

%

Level 2

60

%

Level 3

28

30

32

%

1.3.9

Ratio of output current

level to initial current in

Dimming Mode 3

DIM1: GND

DIM2: GND

Level 1

100

%

Level 2

28

30

32

%

1.3.10

Interval time between

external switch actions

2

s

1.3.11

LX switch continuous

current

ZLED7030

1.2

A

ZLED7330

1.0

A

ZLED7530

0.75

A

ZLED7730

0.35

A

1.3.12

LX switch leakage current

1

μA

1.3.13

LX switch on resistance

0.3

0.4

Ω

1.3.14

Minimum switch on time

LX switch on

200

ns

1.3.15

Minimum switch off time

LX switch off

200

ns

1.3.16

Recommended operating

frequency maximum

1

MHz