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MB91155 Scheda tecnica(PDF) 84 Page - fujitsu semiconductor |
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MB91155 Scheda tecnica(HTML) 84 Page - fujitsu semiconductor |
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84 / 105 page ![]() MB91F155A/MB91155/MB91154 84 4. Flash Memory Erase and Programming Performance * : TA = +25 °C, VCC = 3.3 V Parameter Value Unit Remarks Min Typ Max Sector Erase Time 1 * 15 * s Excludes programming time prior to erasure Half Word Programming Time 16 * 3600 * µs Excludes system-level overhead Chip Programming Time 2.1 * s Excludes system-level overhead Erase/Program Cycle 10000 cycle |
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