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MBR16100CTG.. Scheda tecnica(PDF) 2 Page - ON Semiconductor |
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MBR16100CTG.. Scheda tecnica(HTML) 2 Page - ON Semiconductor |
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2 / 5 page ![]() MBR16100CTG www.onsemi.com 2 MAXIMUM RATINGS (Per Diode Leg) Rating Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 100 V Average Rectified Forward Current (TC = 166°C) Per Diode Per Device IF(AV) 8.0 16 A Peak Repetitive Forward Current (Square Wave, 20 kHz) TC = 165°C IFRM 16 A Non-repetitive Peak Surge Current (Surge applied at rated load conditions half-wave, single phase, 60 Hz) IFSM 150 A Peak Repetitive Reverse Surge Current (2.0 ms, 1.0 kHz) IRRM 0.5 A Operating Junction Temperature (Note 1) TJ *65 to +175 °C Storage Temperature Tstg *65 to +175 °C Voltage Rate of Change (Rated VR) dv/dt 10,000 V/ ms Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA. THERMAL CHARACTERISTICS Characteristic Symbol Value Unit Maximum Thermal Resistance, Junction−to−Case (Min. Pad) Junction−to−Ambient (Min. Pad) RqJC RqJA 2.0 60 °C/W ELECTRICAL CHARACTERISTICS (Per Diode Leg) Characteristic Symbol Min Typical Max Unit Maximum Instantaneous Forward Voltage (Note 2) (iF = 8.0 A, TJ = 125°C) (iF = 8.0 A, TJ = 25°C) (iF = 16 A, TJ = 125°C) (iF = 16 A, TJ = 25°C) vF − − − − 0.56 0.68 0.67 0.79 0.60 0.74 0.69 0.84 V Maximum Instantaneous Reverse Current (Note 2) (Rated dc Voltage, TJ = 125°C) (Rated dc Voltage, TJ = 25°C) iR − − 0.95 0.0013 5.0 0.1 mA Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2%. |
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