2

Absolute Maximum Ratings

Symbols

Parameters

Units

Minimum

Maximum

Notes

Vd-Vg

Drain to Gate Voltage

V

8

Vd

Positive Supply Voltage

V

5.5

Vg

Gate Supply Voltage

V

-2.5

0.5

Id

Drain Current

mA

TBD

2

PD

Power Dissipation

W

3.5

2 and 3

Pin

CW Input Power

dBm

20

2

Tch

Operating Channel Temp

°C

+150

4

Tstg

Storage Case Temp.

°C

-65 to +155

Tmax

Maximum Assembly Temp (30 sec max)

°C

+320

Notes:

1. Operation in excess of any one of these conditions may result in permanent damage to this device. Functional operation at or near these

limitations will significantly reduce the lifetime of the device.

2. Dissipated power PD is in any combination of DC voltage, Drain Current, input power and power delivered to the load.

3. When operated at maximum PD with a base plate temperature of 85

°C, the median time to failure (MTTF) is significantly reduced.

4. These ratings apply to each individual FET. The operating channel temperature will directly affect the device MTTF. For maximum life, it is

recommended that junction temperatures (Tj) be maintained at the lowest possible levels. See MTTF vs. Tchannel Temperature Table.

DC Specifications/ Physical Properties

Symbol

Parameters and Test Conditions

Units

Value

Drain Supply Current

mA

650

Gate Supply Operating Voltage

V

-1.1

(Channel-to-Base Plate)

°C/W

22

Channel Temperature

°C

150.6

Notes:

6. Channel-to-backside Thermal Resistance (θch-b) = 10°C/W at Tchannel (Tc) = 107°C as measured using infrared microscopy. Thermal Resistance

at backside temperature (Tb) = 25°C calculated from measured data.

Thermal Properties

Parameter

Test Conditions

Value

Maximum Power Dissipation

Tbaseplate = 85°C

PD = 3.5W

Tchannel = 150°C

Thermal Resistance (

qjc)

Vd = 5V

Id = 650mA

PD = 3.25W

Tbaseplate = 75°C

qjc = 22°C/W

Tchannel = 146°C

Thermal Resistance (

qjc)

Under RF Drive

Vd = 5V

Id = 810mA

Pout = 29dBm

Pd = 3.3W

Tbaseplate = 85°C

qjc = 22°C/W

Tchannel = 147°C